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vs-st173c series www.vishay.com vishay semiconductors revision: 16-dec-13 1 document number: 94366 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 inverter grade thyristors (hockey puk version), 330 a features ? metal case with ceramic insulator ? all diffused design ? center amplifying gate ? guaranteed high dv/dt ? international standard case to-200ab (a-puk) ? guaranteed high di/dt ? high surge current capability ? low thermal impedance ? high speed performance ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications ?inverters ? choppers ? induction heating ? all types of force-commutated converters ? ? ? electrical specifications product summary package to-200ab (a-puk) diode variation single scr i t(av) 330 a v drm /v rrm 1000 v, 1200 v v tm 2.07 v i tsm at 50 hz 4680 a i tsm at 60 hz 4900 a i gt 200 ma t c /t hs 55 c to-200ab (a-puk) major ratings and characteristics parameter test conditions values units i t(av) 330 a t hs 55 c i t(rms) 610 a t hs 25 c i tsm 50 hz 4680 a 60 hz 4900 i 2 t 50 hz 110 ka 2 s 60 hz 100 v drm /v rrm 1000 to 1200 v t q range 15 to 30 s t j -40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma vs-st173c..c 10 1000 1100 40 12 1200 1300
vs-st173c series www.vishay.com vishay semiconductors revision: 16-dec-13 2 document number: 94366 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 current carrying capability frequency units 50 hz 760 660 1200 1030 5570 4920 a 400 hz 730 590 1260 1080 2800 2460 1000 hz 600 490 1200 1030 1620 1390 2500 hz 350 270 850 720 800 680 recovery voltage v r 50 50 50 v voltage before turn-on v d v drm v drm v drm rise of on-state current di/dt 50 - - a/s heatsink temperature 405540554055c equivalent values for rc circuit 47/0.22 47/0.22 47/0.22 ?? f on-state conduction parameter symbol test conditions values units maximum average on-state current ? at heatsink temperature i t(av) 180 conduction, half sine wave ? double side (sin gle side) cooled 330 (120) a 55 (85) c maximum rms on-state current i t(rms) dc at 25 c heatsink temp erature double side cooled 610 a maximum peak, one half cycle, ? non-repetitive surge current i tsm t = 10 ms no voltage ? reapplied sinusoidal half wave, ? initial t j = t j maximum 4680 t = 8.3 ms 4900 t = 10 ms 100 % v rrm reapplied 3940 t = 8.3 ms 4120 maximum i 2 t for fusing i 2 t t = 10 ms no voltage ? reapplied 110 ka 2 s t = 8.3 ms 100 t = 10 ms 100 % v rrm reapplied 77 t = 8.3 ms 71 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 1100 ka 2 ? s maximum peak on -state voltage v tm i tm = 600 a, t j = t j maximum, ? t p = 10 ms sine wave pulse 2.07 v low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 1.55 high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 1.61 low level value of forward slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.87 m ? high level value of forward slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 0.77 maximum holding current i h t j = 25 c, i t > 30 a 600 ma typical latchi ng current i l t j = 25 c, v a = 12 v, r a = 6 ? , i g = 1 a 1000 switching parameter symbol test conditions values units maximum non-repe titive rate ? of rise of turned on current di/dt t j = t j maximum, v drm = rated v drm , i tm = 2 x di/dt 1000 a/s typical delay time t d t j = 25 c, v dm = rated v drm , i tm = 50 a dc, t p = 1 s ? resistive load, gate pulse: 10 v, 5 ? source 1.1 s maximum turn-off time minimum t q t j = t j maximum, ? i tm = 300 a, commutating di/dt = 20 a/s ? v r = 50 v, t p = 500 s, dv/dt: see table in device code 15 maximum 30 180 el i tm 180 el i tm 100 s i tm
vs-st173c series www.vishay.com vishay semiconductors revision: 16-dec-13 3 document number: 94366 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thj-hs when devices operate at different conduction angles than dc blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum, linear to 80 % v drm , ? higher value available on request 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 40 ma triggering parameter symbol test co nditions values units maximum peak gate power p gm t j = t j maximum, f = 50 hz, d% = 50 60 w maximum average gate power p g(av) 10 maximum peak positi ve gate current i gm t j = t j maximum, t p ? 5 ms 10 a maximum peak positive gate voltage + v gm 20 v maximum peak negative gate voltage - v gm 5 maximum dc gate curren t required to trigger i gt t j = 25 c, v a = 12 v, r a = 6 ? 200 ma maximum dc gate voltag e required to trigger v gt 3v maximum dc gate curr ent not to trigger i gd t j = t j maximum, rated v drm applied 20 ma maximum dc gate volt age not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating juncti on temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance , junction to heatsink r thj-hs dc operation single side cooled 0.17 k/w dc operation double side cooled 0.08 maximum thermal resistance, case to heatsink r thc-hs dc operation single side cooled 0.033 dc operation double side cooled 0.017 mounting force, 10 % 4900 (500) n (kg) approximate weight 50 g case style see dime nsions - link at the end of datasheet to-200ab (a-puk) ? r thj-hs conduction conduction angle sinusoidal conduction rectangular conduction test conditions units single side double side single side double side 180 0.015 0.016 0.011 0.011 t j = t j maximum k/w 120 0.018 0.019 0.019 0.019 90 0.024 0.024 0.026 0.026 60 0.035 0.035 0.036 0.037 30 0.060 0.060 0.060 0.061
vs-st173c series www.vishay.com vishay semiconductors revision: 16-dec-13 4 document number: 94366 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ra tings characteristics fig. 2 - current ra tings characteristics fig. 3 - current ra tings characteristics fig. 4 - current ra tings characteristics fig. 5 - on-state powe r loss characteristics fig. 6 - on-state powe r loss characteristics 0 200 maximum allowable heatsink temperature (c) average on-state current (a) 40 80 240 120 160 40 50 60 70 80 90 100 110 120 130 st173c..c series (single side cooled) r thj-hs (dc) = 0.17 k/w ? conduction angle 60 30 90 120 180 0 250 300 350 average on-state current (a) 50 150 100 200 maximum allowable heatsink temperature (c) 20 30 40 50 60 70 80 90 100 110 120 130 st173c..c series (single side cooled) r thj-hs (dc) = 0.17 k/w ? conduction period 30 60 90 120 180 dc 0 250 300 350 400 average on-state current (a) 50 150 100 200 maximum allowable heatsink temperature (c) 30 40 50 60 70 80 90 100 110 120 130 30 60 90 120 180 st173c..c series (double side cooled) r thj-hs (dc) = 0.08 k/w ? conduction angle average on-state current (a) maximum allowable heatsink temperature (c) 0 500 600 700 100 300 200 400 20 30 40 50 60 70 80 90 100 110 120 130 st173c..c series (double side cooled) r thj-hs (dc) = 0.08 k/w ? conduction period dc 30 60 90 120 180 average on-state current (a) maximum average on-state power loss (w) 0 100 200 300 400 500 600 700 800 900 1000 rms limit 0 250 300 350 400 450 50 150 100 200 180 120 90 60 30 ? conduction angle st173c..c series t j = 125 c average on-state current (a) maximum average on-state power loss (w) 0 200 400 600 800 1000 1200 1400 0 300 400 500 600 700 100 200 dc 180 120 90 60 30 rms limit st173c..c series t j = 125 c ? conduction period
vs-st173c series www.vishay.com vishay semiconductors revision: 16-dec-13 5 document number: 94366 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - maximum non-re petitive surge current single and double side cooled fig. 8 - maximum non-re petitive surge current single and double side cooled fig. 9 - on-state volt age drop characteristics fig. 10 - thermal impedance z thj-hs characteristics fig. 11 - reverse recovered charge characteristics fig. 12 - reverse recovered current characteristics 1 10 100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) 2000 2500 3000 3500 4000 4500 initial t j = 125 c at 60 hz 0.0083 s at 50 hz 0.0100 s at any rated load condition and with rated v rrm applied following surge. st173c..c series 0.01 0.1 1 pulse train duration (s) peak half sine wave on-state current (a) 1500 2000 2500 3000 3500 4000 4500 5000 no voltage reapplied rated v rrm reapplied maximum non-repetitive surge current versus pulse train duration. control of conduction may not be maintained. initial t j = 125 c st173c..c series 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1000 10 000 instantaneous on-state current (a) instantaneous on-state voltage (v) st173c..c series t j = 25 c t j = 125 c 0.01 0.1 1 10 0.001 1 square wave pulse duration (s) transient thermal impedance z thj-hs (k/w) 0.001 0.01 0.1 st173c..c series steady state value r thj-hs = 0.17 k/w (single side cooled) r thj-hs = 0.08 k/w (double side cooled) (dc operation) 20 0 40 60 80 100 di/dt - rate of fall of on-state current (a/s) q rr - maximum reverse recovery charge (c) 0 50 100 150 200 250 st173c..c series t j = 125 c i tm = 500 a i tm = 300 a i tm = 200 a i tm = 100 a i tm = 50 a 20 0 20 0 40 60 80 100 40 60 80 100 120 140 160 di/dt - rate of fall of forward current (a/s) i rr - maximum reverse recovery current (a) st173c..c series t j = 125 c i tm = 500 a i tm = 300 a i tm = 200 a i tm = 100 a i tm = 50 a
vs-st173c series www.vishay.com vishay semiconductors revision: 16-dec-13 6 document number: 94366 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 13 - frequency characteristics fig. 14 - frequency characteristics fig. 15 - frequency characteristics 100 10 100 1000 10 000 1000 10 000 pulse basewidth (s) peak on-state current (a) snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm t p st173c..c series sinusoidal pulse t c = 40 c 50 hz 100 200 500 400 1000 1500 2500 3000 5000 100 10 100 1000 10 000 1000 10 000 pulse basewidth (s) peak on-state current (a) t p st173c..c series sinusoidal pulse t c = 55 c 50 hz 100 500 400 1000 1500 2500 3000 5000 snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm 200 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm st173c..c series trapezoidal pulse t c = 40 c di/dt = 50 a/s t p 5000 2500 1500 1000 400 200 100 50 hz 3000 500 2000 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm st173c..c series trapezoidal pulse t c = 55 c di/dt = 50 a/s t p 5000 2500 1500 1000 400 200 100 50 hz 3000 500 2000 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) st173c..c series trapezoidal pulse t c = 40 c di/dt = 100 a/s t p 50 hz 100 200 400 500 1000 1500 2500 3000 5000 10 000 10 snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm st173c..c series trapezoidal pulse t c = 55 c di/dt = 100 a/s t p 50 hz 100 200 400 500 1000 1500 2500 3000 5000 10 000 10
vs-st173c series www.vishay.com vishay semiconductors revision: 16-dec-13 7 document number: 94366 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 16 - maximum on-state en ergy power loss characteristics fig. 17 - gate characteristics pulse basewidth (s) peak on-state current (a) 10 100 1000 10 000 10 100 1000 10 000 t p st173c..c series sinusoidal pulse 100 000 0.1 0.2 0.5 2 3 1 5 10 20 joules per pulse 0.3 pulse basewidth (s) peak on-state current (a) 10 100 1000 10 000 10 100 1000 10 000 100 000 0.1 0.2 0.5 2 3 1 5 10 20 joules per pulse t p st173c..c series rectangular pulse di/dt = 50 a/s 0.3 0.1 1 10 100 0.001 instantaneous gate current (a) instantaneous gate voltage (v) 0.01 0.1 1 10 100 (b) v gd i gd (1) (2) (3) device: st173c..c series (4) frequency limited by p g(av) (1) p gm = 10 w, t p = 20 ms (2) p gm = 20 w, t p = 10 ms (3) p gm = 40 w, t p = 5 ms (4) p gm = 60 w, t p = 3.3 ms rectangular gate pulse a) recommended load line for rated di/dt: 20 v, 10 ; t r 1 s b) recommended load line for 30 % rated di/dt: 10 v, 10 t r 1 s (a) t j = 40 c t j = 25 c t j = 125 c
vs-st173c series www.vishay.com vishay semiconductors revision: 16-dec-13 8 document number: 94366 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions www.vishay.com/doc?95074 3 = fast-on terminals (gate and aux. cathode soldered leads) 1 - thyristor 2 - essential part number 3 - 3 = fast turn-off 4 - c = ceramic puk 5 - voltage code x 100 = v rrm (see voltage ratings table) 10 6 - c = puk case to-200ab (a-puk) 7 - reapplied dv/dt code (for t q test condition) 8 -t q code 9 - 0 = eyelet terminals (gate and aux. cathode unsoldered leads) 1 = fast-on terminals (gate and aux. cathode unsoldered leads) 2 = eyelet terminals (gate and aux. cathode soldered leads) 11 - critical dv/dt: none = 500 v/s (standard value) l = 1000 v/s (special selection) * standard part number. all other types available only on request. t q (s) dv/dt - t q combinations available dv/dt (v/s) 20 50 100 200 400 15 cl -- -- -- -- 18 cp dp ep fp * -- 20 ck dk ek fk * hk 25 cj dj ej fj hj 30 -- dh eh fh hh device code 5 1 3 2 4 6 7 8 9 10 11 st vs- 17 3 c 12 c h k 1 - - vishay semiconductors product
document number: 95074 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-aug-07 1 to-200ab (a-puk) outline dimensions vishay semiconductors dimensions in millimeters (inches) 4.75 (0.19) 28 (1.10) 6.5 (0.26) 19 (0.75) dia. max. 0.3 (0.01) min. 0.3 (0.01) min. 13.7/14.4 (0.54/0.57) 25 5 gate terminal for 1.47 (0.06) dia. pin receptacle 19 (0.75) dia. max. 38 (1.50) dia max. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 42 (1.65) max. anode to gate creepage distance: 7.62 (0.30) minimum strike distance: 7.12 (0.28) minimum quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification)
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